| PART |
Description |
Maker |
| FDS6890A FDS6890ANL DS6890ANL |
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,7.5A I(D),SO
From old datasheet system
Dual N-Channel 2.5V Specified PowerTrench TM MOSFET
Dual N-Channel 2.5V Specified PowerTrench MOSFET
|
Fairchild Semiconductor Corp
|
| PHN210T PHN210T_1 |
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 27V V(BR)DSS | 3.4A I(D) | SO 晶体管| MOSFET | MATCHED PAIR | N-CHANNEL | 27V V(BR)DSS | 3.4A I(D) | SO封装
Dual N-channel enhancement mode TrenchMOS(TM) transistor
From old datasheet system
|
NXP Semiconductors N.V.
Philips
|
| ALD1102APAL ALD1102ASAL ALD1102BPAL ALD1102BSAL AL |
DUAL P-CHANNEL MATCHED MOSFET PAIR
|
Advanced Linear Devices
|
| BL-BG63R4V-1 |
10mV Dual N-Channel Matched MOSFET Pair, Enhancement Mode, 8L SOIC
|
Bright LED Electronics Corp.
|
| ALD1101ASAL ALD1101APAL ALD1101A12 ALD1101BPAL ALD |
DUAL N-CHANNEL MATCHED MOSFET PAIR
DUAL N-CHANNEL MATCHED MOSFET PAIR
|
Advanced Linear Devices
|
| BL-BG33V1 |
10mV Dual P-Channel Matched MOSFET Pair, Enhancement Mode, 8L PDIP LED节能灯规
|
Bright LED Electronics Corp.
Bright LED Electronics, Corp.
|
| ALD110904SA ALD110804 ALD110804PC ALD110804SC ALD1 |
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
|
ALD[Advanced Linear Devices]
|
| IRF7341Q IRF7341QTR |
HEXFET? Power MOSFET
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 55V V(BR)DSS | 5.1A I(D) | SO
|
International Rectifier
|
| BL-BG33V4V-1 |
2mV Dual P-Channel Matched MOSFET Pair, Enhancement Mode, 8L PDIP
LED GaAsP/GaP Green Low current requirement.
|
Bright LED Electronics Corp.
|
| OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6D package
400V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6E package
1000V Dual N-Channel MOSFET in a S-6E package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6
400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier
Electronic Theatre Controls, Inc.
Atmel, Corp.
|
| LS3316 LS3316-100-RM LS3316-470-RM LS3316-6R8-RM L |
10.0mV Dual P-Channel Matched Pair MOSFET Array, Enhancement Mode, 8L PDIP
5.0mV Dual N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 8L PDIP, EPAD Enabled
5.0mV Dual N-Channel EPAD Matched MOSFET Array, Enhancement Mode, 8L SOIC, EPAD Enabled
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 3.3 V, Enhancement Mode, 8L SOIC, EPAD Enabled 1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR, SMD
|
ICE Components, Inc.
|
|
